? 2006 ixys all rights reserved ds99341e(03/06) polarhv tm hiperfet power mosfet v dss = 600 v i d25 =15 a r ds(on) 250 m t rr 250 ns n-channel enhancement mode fast recovery diode avalanche rated symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 600 v v gs(th) v ds = v gs , i d = 4 ma 3.0 5.0 v i gss v gs = 30 v, v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 500 a r ds(on) v gs = 10 v, i d = 15 a 250 m pulse test, t 300 s, duty cycle d 2 % symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c; r gs = 1 m 600 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c15a i dm t c = 25 c, pulse width limited by t jm 80 a i ar t c = 25 c30a e ar t c = 25 c50mj e as t c = 25 c 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 3 p d t c = 25 c 166 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c v isol 50/60 hz, rms, t = 1minute, leads-to-tab 2500 v~ f c mounting force (ixfc) 11..65 / 2.5..15 n/lb (ixfr) 20..120 / 4.5..25 n/lb weight isoplus220 2 g isoplus247 5 g ixfc 30n60p ixfr 30n60p electrically isolated back surface g = gate d = drain s = source features z silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation z low drain to tab capacitance(<30pf) applications z dc-dc converters z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z ac motor control advantages z easy assembly z space savings z high power density isolated back surface isoplus220 tm (ixfc) e153432 g d s isoplus247 tm (ixfr) e153432 isolated back surface
ixys reserves the right to change limits, test conditions, and dimensions. ixfc 30n60p ixfr 30n60p symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 15 a, pulse test 15 27 s c iss 3820 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 360 pf c rss 28 pf t d(on) 22 ns t r v gs = 10 v, v ds = v dss , i d = 15 a 20 ns t d(off) r g = 3 (external) 75 ns t f 25 ns q g(on) 85 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 15 a 26 nc q gd 28 nc r thjc 0.75 c/w r thcs 0.21 c/w source-drain diode characteristic values (t j = 25 c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 30 a i sm repetitive 80 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25a, -di/dt = 100 a/ s 200 ns i rm v r = 100 v; v gs = 0 v 8 a q rm 0.6 c ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 isoplus220 (ixfc) outline ixys co 0177 r0 note: bottom heatsink (pin 4) is electrically isolated from pin 1,2, or 3. isoplus247 (ixfr) outline
? 2006 ixys all rights reserved ixfc 30n60p ixfr 30n60p fig. 6. drain current vs. case tem perature 0 2 4 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 2. extended output characteristics @ 25 o c 0 5 10 15 20 25 30 35 40 45 50 55 60 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6.5v 6v 5.5v fig. 3. output characte ris tics @ 125 o c 0 3 6 9 12 15 18 21 24 27 30 0 2 4 6 8 10 12 14 16 18 v d s - volts i d - amperes v gs = 10v 7v 5.5v 5v 4.5v 6v fig. 1. output characteristics @ 25 o c 0 3 6 9 12 15 18 21 24 27 30 012345678 v d s - volts i d - amperes v gs = 10v 8v 7v 5.5v 5v 6.5v 6v fig . 4. r ds(on ) norm alize d to i d = 15a value vs. junction tem perature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 30a i d = 15a v gs = 10v fig. 5. r ds(on) norm alize d to i d = 15a value vs. drain current 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 0 5 10 15 20 25 30 35 40 45 50 55 60 i d - amperes r d s ( o n ) - normalized t j = 125 o c t j = 25 o c v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. ixfc 30n60p ixfr 30n60p fig. 12. m axim um trans ie nt therm al resistance 0.01 0.10 1.00 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - o c / w fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 10203040 5060708090 q g - nanocoulombs v g s - volts v ds = 300v i d = 15a i g = 10m a fig. 7. input adm ittance 0 5 10 15 20 25 30 35 3.5 4 4.5 5 5.5 6 6.5 7 v g s - volts i d - amperes t j = 125 o c 25 o c -40 o c fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 40 i d - amperes g f s - siemens t j = -40 o c 25 o c 125 o c fig. 9. source current vs. source-to-drain voltage 0 10 20 30 40 50 60 70 80 90 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 v s d - volts i s - amperes t j = 125 o c t j = 25 o c
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